MITSUBISHI QM50TX-HB

MITSUBISHI QM50TX-HB
#QM50TX-HB MITSUBISHI QM50TX-HB New Power Bipolar Transistor 50A I(C) 6-Element NPN Silicon Plastic/Epoxy 11 Pin, QM50TX-HB pictures, QM50TX-HB price, #QM50TX-HB supplier
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Manufacturer Part Number: QM50TX-HB
Part Life Cycle Code: Obsolete
Ihs Manufacturer: MITSUBISHI ELECTRIC CORP
Package Description: FLANGE MOUNT, R-PUFM-X11
Manufacturer: Mitsubishi Electric
• IC Collector current .......................... 50A
• VCEX Collector-emitter voltage ........... 600V
• hFE DC current gain............................. 750
Risk Rank: 5.66
Collector Current-Max (IC): 50 A
Configuration: COMPLEX
DC Current Gain-Min (hFE): 750
Fall Time-Max (tf): 3000 ns
JESD-30 Code: R-PUFM-X11
Number of Elements: 6
Number of Terminals: 11
Operating Temperature-Max: 150 °C
Package Body Material: PLASTIC/EPOXY
Package Shape: RECTANGULAR
Package Style: FLANGE MOUNT
Polarity/Channel Type: NPN
Qualification Status: Not Qualified
Subcategory: BIP General Purpose Power
Surface Mount: NO
Terminal Form: UNSPECIFIED
Terminal Position: UPPER
Transistor Element Material: SILICON
VCEsat-Max: 2.5 V
Power Bipolar Transistor 50A I(C) 6-Element NPN Silicon Plastic/Epoxy 11 Pin